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1. product profile 1.1 general description 250 w ldmos power transistor intended for l-band radar applications in the 1.2 ghz to 1.4 ghz range. 1.2 features ? typical pulsed rf performance at a frequency of 1.2 ghz to 1.4 ghz, a supply voltage of 50 v, an i dq of 100 ma, a t p of 500 s with of 20 %: ? output power = 250 w ? power gain = 17 db ? efficiency = 55 % ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (1.2 ghz to 1.4 ghz) ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) bll6h1214l-250; BLL6H1214LS-250 ldmos l-band radar power transistor rev. 01 ? 11 december 2009 objective data sheet table 1. test information typical rf performance at t case = 25 c; t p = 500 s; = 20 %; i dq = 100 ma; in a class-ab production test circuit. mode of operation f v ds p l g p d t r t f (ghz) (v) (w) (db) (%) (ns) (ns) pulsed rf 1.2 to 1.4 50 250 17 55 15 5 caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 2 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 1.3 applications ? l-band power amplifiers for radar applications in the 1.2 ghz to 1.4 ghz frequency range 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol bll6h1214l-250 (sot502a) 1 drain 2 gate 3 source [1] BLL6H1214LS-250 (sot502b) 1 drain 2 gate 3 source [1] 3 2 1 sym11 2 1 3 2 3 2 1 sym11 2 1 3 2 table 3. ordering information type number package name description version bll6h1214l-250 - flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a BLL6H1214LS-250 - earless flanged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage ? 0.5 +13 v i d drain current - 72 a t stg storage temperature ? 65 +150 c t j junction temperature - 225 c
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 3 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 5. thermal characteristics 6. characteristics 6.1 ruggedness in class-ab operation the bll6h1214l-250 and BLL6H1214LS-250 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 50 v; i dq = 100 ma; p l = 250 w; t p = 500 s; = 20 %. table 5. thermal characteristics symbol parameter conditions typ unit z th(j-c) transient thermal impedance from junction to case t case = 85 c; p l = 250 w t p = 100 s; = 10 % 0.10 k/w t p = 200 s; = 10 % 0.13 k/w t p = 500 s; = 20 % 0.15 k/w t p = 100 s; = 20 % 0.14 k/w table 6. dc characteristics t j = 25 c. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = 0 v; i d = 2.7 ma 100 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma 1.3 1.8 2.2 v i dss drain leakage current v gs = 0 v; v ds = 50 v - - 1.4 a i dsx drain cut-off current v gs = v gs(th) + 3.75 v; v ds = 10 v 64 72 - a i gss gate leakage current v gs = 11 v; v ds = 0 v - - 140 na g fs forward transconductance v ds = 10 v; i d = 270 ma 3.2 5 - s r ds(on) drain-source on-state resistance v gs = v gs(th) + 3.75 v; i d = 9.5 a - 50 90 m table 7. rf characteristics mode of operation: pulsed rf; t p = 500 s; = 20 %; rf performance at v ds = 50 v; i dq = 100 ma; t case = 25 c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit p l output power 250 - - w v ds drain-source voltage p l = 250 w - - 50 v g p power gain p l = 250 w 15 17 - db rl in input return loss p l = 250 w - 10 - db p l(1db) output power at 1 db gain compression - 300 - w d drain efficiency p l = 250 w 50 55 - % p droop(pulse) pulse droop power p l = 250 w - 0 0.3 db t r rise time p l = 250 w - 15 25 ns t f fall time p l = 250 w - 5 25 ns
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 4 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 7. application information 7.1 impedance information 7.2 rf performance table 8. typical impedance typical values unless otherwise specified. f z s z l ghz 1.2 1.268 ? j2.623 2.987 ? j1.664 1.3 2.193 ? j2.457 2.162 ? j1.326 1.4 2.359 ? j2.052 1.604 ? j1.887 fig 1. definition of transistor impedance 001aaf05 9 drain z l z s gate v ds = 50 v; t p = 500 s; = 20 %; i dq = 100 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; t p = 500 s; = 20 %; i dq = 100 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 2. output power as a function of input power; typical values fig 3. power gain as a function of load power; typical values p i (w) 09 6 3 001aal165 350 p l (w) 0 50 100 150 200 250 300 (1) (2) (3) p l (w) 350 250 50 300 200 100 0 150 001aal166 (1) (2) (3) 12 4 8 20 16 0 g p (db)
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 5 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor v ds = 50 v; t p = 500 s; = 20 %; i dq = 100 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz p l = 250 w; v ds = 50 v; t p = 500 s; = 20 %; i dq = 100 ma. fig 4. drain efficiency as a function of load power; typical values fig 5. power gain and drain efficiency as function of frequency; typical values p l = 250 w; v ds = 50 v; t p = 500 s; = 20 %; i dq = 100 ma. fig 6. input return loss as a function of frequency; typical value p l (w) 350 250 50 300 200 100 0 150 001aal167 30 10 20 50 60 40 70 d (%) 0 (1) (3) (2) f (mhz) 1175 1425 1375 1275 1325 1225 001aal168 14 16 12 18 20 g p (db) 10 d (%) 30 40 20 50 60 10 g p d f (mhz) 1175 1425 1375 1275 1325 1225 001aal169 8 12 4 16 20 rl in (db) 0
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 6 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 7.3 application circuit [1] american technical ce ramics type 100a or capacitor of same quality. [2] american technical ce ramics type 100b or capacitor of same quality. [3] american technical ce ramics type 800b or capacitor of same quality. see table 9 for list of components. fig 7. component layout for class-ab application circuit table 9. list of components see figure 7 . striplines are on a rogers duroid 6006 printed-circuit board (pcb); r = 6.15 f/m; thickness = 0.64 mm. component description value remarks c1 multilayer cerami c chip capacitor 10 f; 35 v [1] c2, c4 multilayer cerami c chip capacitor 51 pf [2] c3, c8 multilayer cerami c chip capacitor 1 nf [2] c5 multilayer cerami c chip capacitor 82 pf [3] c6, c7 multilayer cerami c chip capacitor 56 pf [3] c9 multilayer cerami c chip capacitor 100 pf [3] c10 electrolytic capacitor 47 f; 63 v r1 smd resistor 10 0603 001aal17 0 c5 r1 c6 c1 c3 c2 c4 c8 c9 c10 c7
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 7 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 8. package outline fig 8. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502 a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 8 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor fig 9. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502 b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 9 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 9. abbreviations 10. revision history table 10. abbreviations acronym description ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency smd surface mounted device l-band long wave band vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes bll6h1214l-250_1214ls-250_1 20091211 objective data sheet - -
bll6h1214l-250_1214ls-250_1 ? nxp b.v. 2009. all rights reserved. objective data sheet rev. 01 ? 11 december 2009 10 of 11 nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objec tive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
nxp semiconductors bll6h1214l(s)-250 ldmos l-band radar power transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 december 2009 document identifier: bll6h1214l-250_1214ls-250_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 application circuit . . . . . . . . . . . . . . . . . . . . . . . 6 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 contact information. . . . . . . . . . . . . . . . . . . . . 10 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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